US6M2TR

ROHM Semiconductor

MOSFET N/P-CH 30V/20V TUMT6

ROHM Semiconductor US6M2TR
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[IN STOCK] In Stock: 500 pcs
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

US6M2TR specifications
Parameter / AttributeSpecification / Value
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage30V, 20V
Current - continuous drain (Id) @ 25°C1.5A, 1A
Power - max1W
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case6-SMD, Flat Leads
Vgs(th) (Max) @ id1.5V @ 1mA
Rds on (Max) @ id, vgs240mOhm @ 1.5A, 4.5V
Gate charge (Qg) (Max) @ vgs2.2nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds80pF @ 10V
US6M2TR
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