Skip to main content
ROHM Semiconductor UMZ1NTR — Memory (DRAM / SRAM / Flash / EEPROM)

UMZ1NTR NPN/PNP Transistor, 50V 150mA, SOT-363, Active

MPNUMZ1NTR
End of Life

ROHM UMZ1NTR, dual NPN/PNP small-signal transistor, 50V VCEO, 150mA IC, 180MHz/140MHz ft, 150mW Pd, SOT-363 (UMT6) package, surface mount, ROHS3.

$0.46Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

UMZ1NTR Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN, PNP
Voltage - collector emitter breakdown50V
Current - collector (Ic)150mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 6V
Power - max150mW
Frequency180MHz, 140MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Vce saturation (Max) @ ib, ic400mV @ 5mA, 50mA, 500mV @ 5mA, 50mA

Product details

The ROHM UMZ1NTR packs one NPN and one PNP small-signal transistor into a single 6-TSSOP / SC-88 / SOT-363 package, saving board space compared to two separate SOT-23 devices. Each transistor is rated for a collector-emitter breakdown of 50 V and a continuous collector current of 150 mA, with a total package power dissipation of 150 mW. The NPN side transitions at 180 MHz, the PNP at 140 MHz, making this part suitable for general-purpose switching, signal amplification, and level shifting in compact, low-power designs.

The 50 V VCEO and 150 mA IC limits define the usable operating region for switching loads like small relays, LEDs, or logic-level signals up to 12 V or 24 V rails. The 150 mW package power cap means the total dissipation across both transistors must stay under that limit — if one side runs at 100 mW, the other is budgeted only 50 mW. For continuous duty near the current limit, derate the power or check the on-state voltage drop: VCE(sat) is 400 mV (NPN) and 500 mV (PNP) at 50 mA, so at 150 mA the actual dissipation per transistor can exceed 75 mW, leaving little headroom for the other die.

Transition frequency and gain — signal-path fit

With an ft of 180 MHz (NPN) and 140 MHz (PNP), this part can handle audio-frequency amplification, sensor buffering, and switching up to a few megahertz without significant gain roll-off. The minimum DC current gain (hFE) is 120 at 1 mA, 6 V — a solid baseline for small-signal driver stages. The collector cutoff current is only 100 nA (ICBO), which keeps leakage negligible in high-impedance nodes or battery-powered circuits.

Package and footprint — design-in note

The supplier device package is UMT6 (Rohm's own designation for the 6-pin SOT-363 footprint). It is a surface-mount package with a 1.25 mm body width and 0.65 mm pin pitch — typical for compact consumer, IoT, and portable equipment PCBs. The operating temperature range is rated up to 150 °C junction, so the part can sit near warm components or in enclosed modules as long as the 150 mW power budget is respected.

Lifecycle and sourcing

The laser etch and date-code traceability should match ROHM's factory markings for the UMT6 package — any mismatch in font or logo geometry warrants a decap/X-ray check before accepting a non-franchised lot.

Frequently asked questions

What is the hFE range of UMZ1NTR?

The minimum DC current gain (hFE) is 120 at 1 mA collector current and 6 V VCE. The datasheet typical values are higher, but the guaranteed minimum is 120.