UMT1NTN

ROHM Semiconductor

Rohm Semiconductor UMT1NTN dual PNP transistor, 50V Vceo, 150mA Ic, 140MHz fT, 150mW max power, 6-pin UMT6 (SOT-363) package, surface mount.

ROHM Semiconductor UMT1NTN
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

UMT1NTN specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type2 PNP (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)150mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 1mA, 6V
Power - max150mW
Frequency - transition140MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Vce saturation (Max) @ ib, ic500mV @ 5mA, 50mA

Technical details

Dual PNP transistor in a 6-pin SOT-363 footprint

The Rohm Semiconductor UMT1NTN integrates two PNP transistors in a single 6-pin UMT6 package (also designated as 6-TSSOP, SC-88, or SOT-363). Maximum power dissipation for the dual device is 150mW.

Collector-emitter breakdown is 50V. Continuous collector current is 150mA. Total dissipation is 150mW.

140MHz fT and saturation voltage

The 140MHz transition frequency means the UMT1NTN can handle switching up to several tens of MHz with adequate gain. For saturated switching, the Vce(sat) is specified at 500mV maximum at 5mA base current and 50mA collector current — a typical figure for a general-purpose PNP.

It is also ROHS3 compliant, meeting the latest EU exemption requirements. For current designs, this part presents no lifecycle risk.

UMT1NTN
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