Dual PNP transistor in a 6-pin SOT-363 footprint
The Rohm Semiconductor UMT1NTN integrates two PNP transistors in a single 6-pin UMT6 package (also designated as 6-TSSOP, SC-88, or SOT-363). Each transistor is rated for a collector-emitter breakdown voltage of 50V and a continuous collector current of 150mA, with a transition frequency of 140MHz. Maximum power dissipation for the dual device is 150mW.
Collector-emitter breakdown is 50V. Continuous collector current is 150mA. Total dissipation is 150mW.
140MHz fT and saturation voltage
The 140MHz transition frequency means the UMT1NTN can handle switching up to several tens of MHz with adequate gain. For saturated switching, the Vce(sat) is specified at 500mV maximum at 5mA base current and 50mA collector current — a typical figure for a general-purpose PNP. The DC current gain (hFE) is a minimum of 120 at 1mA collector current and 6V Vce, which is consistent across the operating range.
Active production, ROHS3 compliant
It is also ROHS3 compliant, meeting the latest EU exemption requirements. For current designs, this part presents no lifecycle risk.