Dual pre-biased NPN in a 6-pin SOT-363
The ROHM UMH10NTN packs two NPN transistors with integrated bias resistors into a single UMT6 (SOT-363) package. Each transistor includes a 2.2 kΩ base resistor (R1) and a 47 kΩ base-emitter resistor (R2), eliminating the need for external bias components and saving board area in high-density designs. The 50 V collector-emitter breakdown and 100 mA continuous collector current cover low-power switching tasks such as driving relays, LEDs, or logic-level loads from a microcontroller output.
Bias resistor ratio and saturation behaviour
The 2.2 kΩ / 47 kΩ resistor pair sets the input threshold so that a 5 V logic signal reliably saturates the transistor. At 250 µA base current and 5 mA collector current the Vce(sat) is guaranteed at 300 mV maximum, keeping the voltage drop low enough to avoid thermal runaway in continuous conduction. The 250 MHz transition frequency means the part handles PWM switching up to several megahertz without significant gain roll-off.
Active production and sourcing
It is RoHS3 compliant.