ROHM Semiconductor UMD5NTR — Memory (DRAM / SRAM / Flash / EEPROM)
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RoHS Compliant · Lead-Free EIA-481 Standard
ROHM Semiconductor / Memory (DRAM / SRAM / Flash / EEPROM)

Rohm UMD5NTR Dual NPN/PNP Pre-Biased Transistor, 250 MHz

MPN UMD5NTR
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

Rohm UMD5NTR dual NPN/PNP pre-biased transistor, 50 V VCEO, 100 mA IC, 250 MHz transition frequency, 6-pin UMT6 package, Tape & Reel.

In Stock: 2,950 pcs
MOQ: 10 pcs
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Dispatch: Shenzhen / HK
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10+ pcs
$0.41
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$0.32
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$0.41 / ea · total $4.10

2,950 in stock — maximum per order · MOQ 10 · 3–4 days lead time

$0.38 / ea from 30 pcs

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[SPEC] Essential Parameters Snapshot Full Specifications (13)
Package / Case 6-TSSOP, SC-88, SOT-363

Full Technical Specifications

13 Parameters
UMD5NTR specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce68 @ 5mA, 5V / 30 @ 10mA, 5V
Power - max150mW, 120mW
Frequency - transition250MHz
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Resistor - base (R1)47kOhms, 4.7kOhms
Resistor - emitter base (R2)47kOhms, 10kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA
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Technical Details & Description

Dual pre-biased pair in a single UMT6 package

The Rohm UMD5NTR packs one NPN and one PNP pre-biased transistor into a 6-pin UMT6 surface-mount package. Each transistor integrates the bias resistors — the NPN side uses a 47 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), while the PNP side uses a 4.7 kΩ base resistor and a 10 kΩ emitter-base resistor.

Ratings that decide the fit

Collector-emitter breakdown is rated at 50 V, so this part handles 12 V and 24 V industrial logic rails comfortably, and it can switch 48 V loads with margin. Maximum continuous collector current is 100 mA per transistor, which covers typical relay, LED, and small-signal solenoid drive. The 250 MHz transition frequency means it handles PWM switching into the low-MHz range without significant gain roll-off. Saturation voltage is specified at 300 mV maximum with a 500 µA base drive and 10 mA collector current — a clean low-side switch characteristic for logic-level loads. Total package dissipation is 150 mW for the NPN side and 120 mW for the PNP side, so derate if both transistors conduct continuously at high current in a warm enclosure.

Frequently asked questions

What is the closest functional equivalent to the UMD5NTR?

The EMD4T2R is a close functional peer — also a dual NPN/PNP pre-biased pair in a similar surface-mount package, with the same 50 V breakdown and 250 MHz transition frequency. The bias resistor values differ slightly: the EMD4T2R uses a 10 kΩ base resistor on the NPN side versus the UMD5NTR's 4.7 kΩ on the PNP side, so verify drive current matching before substituting.

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