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ROHM Semiconductor UMD3NTR — Memory (DRAM / SRAM / Flash / EEPROM)
ROHM Semiconductor

UMD3NTR Dual Pre-Biased Transistor, 50V, 100mA, SOT-363

MPNUMD3NTR
End of Life

ROHM Semiconductor UMD3NTR, dual NPN/PNP pre-biased transistor, 50V Vce, 100mA Ic, 150mW, 250MHz ft, 10kΩ base/emitter resistors, UMT6 package.

$0.42Ref. price · indicative, final on quote
UMD3NTR datasheet
Packaging6-TSSOP, SC-88, SOT-363
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

UMD3NTR Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max150mW
Frequency250MHz
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Resistor - base (R1)10kOhms
Resistor - emitter base (R2)10kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Dual pre-biased transistor in a single SOT-363

The ROHM Semiconductor UMD3NTR packs one NPN and one PNP pre-biased transistor into a 6-pin UMT6 (SOT-363) package, each with integrated 10kΩ base and emitter-base resistors. This saves two discrete resistors per channel and shrinks the placement footprint compared to using separate transistors. With a 50V collector-emitter breakdown and 100mA continuous collector current, it handles typical low-side switching and level-shifting tasks in 3.3V or 5V logic systems. The 250MHz transition frequency keeps switching clean for signals up to a few megahertz.

Frequently asked questions

Is UMD3NTR RoHS compliant?

Yes, UMD3NTR is ROHS3 compliant.