SP8M6HZGTB

ROHM Semiconductor

30V NCH+PCH POWER MOSFET. SP8M6H

ROHM Semiconductor SP8M6HZGTB
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SP8M6HZGTB specifications
Parameter / AttributeSpecification / Value
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C5A (Ta), 3.5A (Ta)
Power - max2W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs3.9nC @ 5V, 5.5nC @ 5V
Input capacitance (Ciss) (Max) @ vds230pF @ 10V, 490pF @ 10V
SP8M6HZGTB
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