SH8M31GZETB

ROHM Semiconductor

SH8M31 IS A POWER MOSFET WITH LO

ROHM Semiconductor SH8M31GZETB
Download datasheet (PDF)
[IN STOCK] In Stock: 5 pcs
$5.37/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SH8M31GZETB specifications
Parameter / AttributeSpecification / Value
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C4.5A (Ta)
Power - max2W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 1mA
Rds on (Max) @ id, vgs65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs7nC @ 5V, 40nC @ 10V
Input capacitance (Ciss) (Max) @ vds500pF @ 10V, 2500pF @ 10V
SH8M31GZETB
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