SH8K25GZ0TB1

ROHM Semiconductor

40V NCH+NCH POWER MOSFET : A POW

ROHM Semiconductor SH8K25GZ0TB1
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[IN STOCK] In Stock: 28 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SH8K25GZ0TB1 specifications
Parameter / AttributeSpecification / Value
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage40V
Current - continuous drain (Id) @ 25°C5.2A (Ta)
Power - max1.4W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs85mOhm @ 5.2A, 10V
Gate charge (Qg) (Max) @ vgs1.7nC @ 5V
Input capacitance (Ciss) (Max) @ vds100pF @ 10V
SH8K25GZ0TB1
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