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ROHM Semiconductor SH8J31GZETB

SH8J31GZETB - ROHM Semiconductor

MPNSH8J31GZETB
End of Life

60V PCH+PCH MIDDLE POWER MOSFET

$1.76Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SH8J31GZETB specifications
ParameterValue
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C4.5A
Power - max2W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id3V @ 1mA
Rds on (Max) @ id, vgs70mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs40nC @ 10V
Input capacitance (Ciss) (Max) @ vds2500pF @ 10V