SCT3040KLHRC11

ROHM Semiconductor · Automotive, AEC-Q101 Series

SICFET N-CH 1200V 55A TO247N

ROHM Semiconductor SCT3040KLHRC11
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Technical specifications

SCT3040KLHRC11 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)18V
Current - continuous drain (Id) @ 25°C55A (Ta)
Power dissipation262W
Operating temperature175°C (TJ)
PackageTube
Vgs+22V, -4V
TechnologySiCFET (Silicon Carbide)
CaseTO-247-3
Vgs(th) (Max) @ id5.6V @ 10mA
Rds on (Max) @ id, vgs52mOhm @ 20A, 18V
Gate charge (Qg) (Max) @ vgs107 nC @ 18 V
Input capacitance (Ciss) (Max) @ vds1337 pF @ 800 V
SCT3040KLHRC11
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