SCT3030ALHRC11

ROHM Semiconductor · Automotive, AEC-Q101 Series

SICFET N-CH 650V 70A TO247N

ROHM Semiconductor SCT3030ALHRC11
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Technical specifications

SCT3030ALHRC11 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)18V
Current - continuous drain (Id) @ 25°C70A (Tc)
Power dissipation262W
Operating temperature175°C (TJ)
PackageTube
Vgs+22V, -4V
TechnologySiCFET (Silicon Carbide)
CaseTO-247-3
Vgs(th) (Max) @ id5.6V @ 13.3mA
Rds on (Max) @ id, vgs39mOhm @ 27A, 18V
Gate charge (Qg) (Max) @ vgs104 nC @ 18 V
Input capacitance (Ciss) (Max) @ vds1526 pF @ 500 V
SCT3030ALHRC11
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