SCS306AMC

ROHM Semiconductor

DIODE SIL CARB 650V 6A TO220FM

ROHM Semiconductor SCS306AMC
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Technical specifications

SCS306AMC specifications
Parameter / AttributeSpecification / Value
Diode typeSilicon Carbide Schottky
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.5 V @ 6 A
Current - reverse leakage @ vr30 µA @ 650 V
Current - average rectified6A
Operating temperature - junction175°C (Max)
SpeedNo Recovery Time > 500mA (Io)
PackageTube
CaseTO-220-2 Full Pack
Capacitance @ vr,300pF @ 1V, 1MHz
Reverse recovery time0 ns
SCS306AMC
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