SCS306AHGC9
ROHM Semiconductor
DIODE SIL CARB 650V 6A TO220ACP
[IN STOCK] In Stock: 71 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Diode type | Silicon Carbide Schottky |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.5 V @ 6 A |
| Current - reverse leakage @ vr | 30 µA @ 650 V |
| Current - average rectified | 6A |
| Operating temperature - junction | 175°C (Max) |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tube |
| Case | TO-220-2 |
| Capacitance @ vr, | 300pF @ 1V, 1MHz |
| Reverse recovery time | 0 ns |
SCS306AHGC9
[ALLOC] verified