650 V, 15 A — zero-recovery SiC Schottky
The SCS215AJTLL is a 650 V, 15 A silicon carbide Schottky diode from ROHM in a TO-263AB (D²Pak) surface-mount package. Its zero reverse recovery time (trr = 0 ns) eliminates the turn-off losses inherent in silicon fast-recovery diodes, making it a direct drop-in for high-frequency PFC, LLC resonant converters, and solar inverter boost stages where switching loss dominates the thermal budget.
The datasheet lists No Recovery Time > 500 mA (Io) — meaning the diode exhibits zero stored charge at forward currents up to at least 500 mA, and the trr = 0 ns rating holds across the full 15 A average current range. In practice, this kills the reverse-recovery spike that would otherwise couple into the gate drive or radiate EMI. The 550 pF junction capacitance at 1 V, 1 MHz is the only parasitic you need to manage in the snubber design.
175 °C junction — thermal headroom for power density
Maximum junction temperature is 175 °C. Conduction loss is 1.55 V max Vf at 15 A.
Lifecycle status is Active, ROHS3 compliant. No official second-source cross-reference is listed, but the TO-263AB footprint is common across SiC Schottky diodes from multiple vendors — a parametric search for 650 V, 15 A, zero trr in D²Pak will turn up alternatives if dual-sourcing is required.