RZM002P02T2L

ROHM Semiconductor

MOSFET P-CH 20V 200MA VMT3

ROHM Semiconductor RZM002P02T2L
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MOQ 20 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RZM002P02T2L specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.2V, 4.5V
Current - continuous drain (Id) @ 25°C200mA (Ta)
Power dissipation150mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
CaseSOT-723
Vgs(th) (Max) @ id1V @ 100µA
Rds on (Max) @ id, vgs1.2Ohm @ 200mA, 4.5V
Gate charge (Qg) (Max) @ vgs1.4 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds115 pF @ 10 V
RZM002P02T2L
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