RV2C010UNT2L
ROHM Semiconductor
MOSFET N-CH 20V 1A DFN1006-3
[IN STOCK] In Stock: 3,142 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.2V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 1A (Ta) |
| Power dissipation | 400mW (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | SC-101, SOT-883 |
| Vgs(th) (Max) @ id | 1V @ 1mA |
| Rds on (Max) @ id, vgs | 470mOhm @ 500mA, 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 40 pF @ 10 V |
RV2C010UNT2L
[ALLOC] verified