RV1C002UNT2CL

ROHM Semiconductor

MOSFET N-CH 20V 150MA VML0806

ROHM Semiconductor RV1C002UNT2CL
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RV1C002UNT2CL specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.2V, 4.5V
Current - continuous drain (Id) @ 25°C150mA (Ta)
Power dissipation100mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case3-SMD, No Lead
Vgs(th) (Max) @ id1V @ 100µA
Rds on (Max) @ id, vgs2Ohm @ 150mA, 4.5V
Input capacitance (Ciss) (Max) @ vds12 pF @ 10 V
RV1C002UNT2CL
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