RUF020N02TL

ROHM Semiconductor

MOSFET N-CH 20V 2A TUMT3

ROHM Semiconductor RUF020N02TL
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RUF020N02TL specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C2A (Ta)
Power dissipation320mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±10V
TechnologyMOSFET (Metal Oxide)
Case3-SMD, Flat Leads
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs105mOhm @ 2A, 4.5V
Gate charge (Qg) (Max) @ vgs2 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds180 pF @ 10 V
RUF020N02TL
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