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ROHM Semiconductor RUC002N05T116

RUC002N05T116 N-CH MOSFET 50V 200mA SST3 — ROHM | ICBOMS

MPNRUC002N05T116
End of Life

MOSFET N-CH 50V 200MA SST3

$0.32Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RUC002N05T116 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage50 V
Drive voltage (Max rds on, min rds on)1.2V, 4.5V
Current - continuous drain (Id) @ 25°C200mA (Ta)
Power dissipation200mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs2.2Ohm @ 200mA, 4.5V
Input capacitance (Ciss) (Max) @ vds25 pF @ 10 V