RU1C001UNTCL

ROHM Semiconductor

MOSFET N-CH 20V 100MA UMT3F

ROHM Semiconductor RU1C001UNTCL
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RU1C001UNTCL specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.2V, 4.5V
Current - continuous drain (Id) @ 25°C100mA (Ta)
Power dissipation150mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseSC-85
Vgs(th) (Max) @ id1V @ 100µA
Rds on (Max) @ id, vgs3.5Ohm @ 100mA, 4.5V
Input capacitance (Ciss) (Max) @ vds7.1 pF @ 10 V
RU1C001UNTCL
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