RSR030N06HZGTL

ROHM Semiconductor

MOSFET N-CH 60V 3A TSMT3

ROHM Semiconductor RSR030N06HZGTL
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[IN STOCK] In Stock: 7 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RSR030N06HZGTL specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C3A (Ta)
Power dissipation700mW (Ta)
Operating temperature150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseSC-96
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs85mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs5 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds380 pF @ 10 V
RSR030N06HZGTL
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