RSR010N10HZGTL
ROHM Semiconductor
MOSFET N-CH 100V 1A TSMT3
[IN STOCK] In Stock: 10 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 1A (Ta) |
| Power dissipation | 700mW (Ta) |
| Operating temperature | 150°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | SC-96 |
| Vgs(th) (Max) @ id | 2.5V @ 1mA |
| Rds on (Max) @ id, vgs | 520mOhm @ 1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 3.5 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 140 pF @ 25 V |
RSR010N10HZGTL
[ALLOC] verified