RSM002P03T2L

ROHM Semiconductor

MOSFET P-CH 30V 200MA VMT3

ROHM Semiconductor RSM002P03T2L
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RSM002P03T2L specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C200mA (Ta)
Power dissipation150mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-723
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs1.4Ohm @ 200mA, 10V
Input capacitance (Ciss) (Max) @ vds30 pF @ 10 V
RSM002P03T2L
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