RS1L145GNTB

ROHM Semiconductor

MOSFET N-CH 60V 14.5A/47A 8HSOP

ROHM Semiconductor RS1L145GNTB
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RS1L145GNTB specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C14.5A (Ta), 47A (Tc)
Power dissipation3W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.7V @ 200µA
Rds on (Max) @ id, vgs9.7mOhm @ 14.5A, 10V
Gate charge (Qg) (Max) @ vgs37 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1880 pF @ 30 V
RS1L145GNTB
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