P-channel high-side switch for 12 V automotive loads
The RRS090P03HZGTB is a P-channel power MOSFET from ROHM's automotive series, rated 30 V drain-to-source and 9 A continuous drain at 25 °C. With a maximum on-resistance of 15.4 mOhm at 9 A and 10 V gate drive, it is sized for solenoid, relay, and pump loads in 12 V vehicle electrical systems. AEC-Q101 qualification means it has passed the stress tests for under-hood and chassis-domain deployment — humidity, temperature cycling, and high-temperature reverse bias.
Gate drive and switching budget
Gate charge is 30 nC max at 5 V, and input capacitance is 3000 pF at 10 V drain. For a 20 kHz PWM switching a 9 A load, the gate-driver must source about 0.6 A peak to hit the 30 nC in a 50 ns rise — well within a standard automotive gate-driver IC. The recommended drive voltage for the rated Rds(on) is 10 V, though the 4 V threshold allows logic-level turn-on for lighter loads at reduced conduction loss.
Package and thermal notes
In the 8-SOP package, power dissipation is limited to 2 W at 25 °C ambient. For a 9 A continuous load at 15.4 mOhm, conduction loss is about 1.25 W — leaving 0.75 W headroom for switching loss. Operating junction temperature is rated to 150 °C.
Lifecycle and compliance
ROHS3 compliant, with no exemptions. The series is Automotive, AEC-Q101, so each reel carries the grade traceability for OEM PPAP submissions.