RQ7E110AJTCR

ROHM Semiconductor

MOSFET N-CH 30V 11A TSMT8

ROHM Semiconductor RQ7E110AJTCR
Download datasheet (PDF)
[IN STOCK] In Stock: 53 pcs
$0.61/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RQ7E110AJTCR specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation1.5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-SMD, Flat Lead
Vgs(th) (Max) @ id1.5V @ 10mA
Rds on (Max) @ id, vgs9mOhm @ 4.5A, 11V
Gate charge (Qg) (Max) @ vgs22 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds2410 pF @ 15 V
RQ7E110AJTCR
[ALLOC] verified
Quote