RQ3E120ATTB

ROHM Semiconductor

MOSFET P-CH 30V 12A 8HSMT

ROHM Semiconductor RQ3E120ATTB
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[IN STOCK] In Stock: 1,458 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RQ3E120ATTB specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C12A (Ta)
Power dissipation2W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs8mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs62 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3200 pF @ 15 V
RQ3E120ATTB
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