RQ3E075ATTB

ROHM Semiconductor

MOSFET P-CHANNEL 30V 18A 8HSMT

ROHM Semiconductor RQ3E075ATTB
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[IN STOCK] In Stock: 131 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RQ3E075ATTB specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation15W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs23mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs10.4 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds930 pF @ 15 V
RQ3E075ATTB
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