RQ1E050RPTR

ROHM Semiconductor

MOSFET P-CH 30V 5A TSMT8

ROHM Semiconductor RQ1E050RPTR
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[IN STOCK] In Stock: 1,465 pcs
$0.71/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RQ1E050RPTR specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C5A (Ta)
Power dissipation700mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SMD, Flat Lead
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs31mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs28 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1300 pF @ 10 V
RQ1E050RPTR
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