RHP020N06T100

ROHM Semiconductor

MOSFET N-CH 60V 2A MPT3

ROHM Semiconductor RHP020N06T100
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[IN STOCK] In Stock: 445 pcs
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RHP020N06T100 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C2A (Ta)
Power dissipation500mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-243AA
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs200mOhm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds140 pF @ 10 V
RHP020N06T100
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