RGW80TS65DGC11
ROHM Semiconductor
IGBT TRNCH FIELD 650V 78A TO247N
[IN STOCK] In Stock: 2 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| IGBT type | Trench Field Stop |
| Input type | Standard |
| Mounting | Through Hole |
| Voltage - collector emitter breakdown | 650 V |
| Current - collector (Ic) | 78 A |
| Current - collector pulsed | 160 A |
| Power - max | 214 W |
| Operating temperature | -40°C ~ 175°C (TJ) |
| Package | Tube |
| Gate charge | 110 nC |
| Case | TO-247-3 |
| Test condition | 400V, 40A, 10Ohm, 15V |
| Switching energy | 760µJ (on), 720µJ (off) |
| Td (on/off) @ 25°C | 44ns/143ns |
| Vce(on) (Max) @ vge, ic | 1.9V @ 15V, 40A |
| Reverse recovery time | 92 ns |
RGW80TS65DGC11
[ALLOC] verified