RGT80TS65DGC13

ROHM Semiconductor

IGBT TRNCH FIELD 650V 70A TO247G

ROHM Semiconductor RGT80TS65DGC13
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Technical specifications

RGT80TS65DGC13 specifications
Parameter / AttributeSpecification / Value
IGBT typeTrench Field Stop
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown650 V
Current - collector (Ic)70 A
Current - collector pulsed120 A
Power - max234 W
Operating temperature-40°C ~ 175°C (TJ)
PackageTube
Gate charge79 nC
CaseTO-247-3
Test condition400V, 40A, 10Ohm, 15V
Td (on/off) @ 25°C34ns/119ns
Vce(on) (Max) @ vge, ic2.1V @ 15V, 40A
Reverse recovery time236 ns
RGT80TS65DGC13
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