RGT50NS65DGC9
ROHM Semiconductor
IGBT TRENCH FIELD 650V 48A TO262
[IN STOCK] In Stock: 5 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| IGBT type | Trench Field Stop |
| Input type | Standard |
| Mounting | Through Hole |
| Voltage - collector emitter breakdown | 650 V |
| Current - collector (Ic) | 48 A |
| Current - collector pulsed | 75 A |
| Power - max | 194 W |
| Operating temperature | -40°C ~ 175°C (TJ) |
| Package | Tube |
| Gate charge | 49 nC |
| Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Test condition | 400V, 25A, 10Ohm, 15V |
| Td (on/off) @ 25°C | 27ns/88ns |
| Vce(on) (Max) @ vge, ic | 2.1V @ 15V, 25A |
| Reverse recovery time | 58 ns |
RGT50NS65DGC9
[ALLOC] verified