1200 V, 50 A trench field stop — sizing the power stage
The RGS50TSX2GC11 is a 1200 V, 50 A continuous trench field-stop IGBT in a TO-247N through-hole package.
Switching loss budget at the test point
Under the test condition of 600 V, 25 A, 10 Ω gate resistor, and 15 V gate drive, the turn-on energy is 1.4 mJ and turn-off energy is 1.65 mJ. The gate charge of 67 nC means the gate driver must supply about 1 A peak to charge the gate in 67 ns for a 15 V swing — a standard 2–4 A driver handles this comfortably.
175 °C junction — thermal headroom for transient overloads
Rated for a maximum junction temperature of 175 °C, this IGBT can tolerate short-duration overloads that would push a 150 °C-rated device past its limit. The 395 W power dissipation ceiling is the steady-state limit at Tc=25 °C; actual allowable dissipation derates with case temperature per the datasheet curve.
Active production — no LTB clock ticking
No end-of-life notice, no last-time-buy deadline. ROHS3 compliant.