RFUH20TB4SNZC9

ROHM Semiconductor

DIODE GEN PURP 430V 20A TO220NFM

ROHM Semiconductor RFUH20TB4SNZC9
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MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RFUH20TB4SNZC9 specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)430 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 20 A
Current - reverse leakage @ vr10 µA @ 430 V
Current - average rectified20A
Operating temperature - junction150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-2 Full Pack
Reverse recovery time25 ns
RFUH20TB4SNZC9
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