RFUH10NS6STL

ROHM Semiconductor

DIODE GEN PURP 600V 10A LPDS

ROHM Semiconductor RFUH10NS6STL
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RFUH10NS6STL specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2.8 V @ 10 A
Current - reverse leakage @ vr10 µA @ 600 V
Current - average rectified10A
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Reverse recovery time25 ns
RFUH10NS6STL
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