RFN10NS3STL

ROHM Semiconductor

DIODE GEN PURP 350V 10A LPDS

ROHM Semiconductor RFN10NS3STL
Download datasheet (PDF)
[IN STOCK] In Stock: 50 pcs
$2.36/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RFN10NS3STL specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)350 V
Voltage - forward (Vf) (Max) @ if1.5 V @ 10 A
Current - reverse leakage @ vr10 µA @ 350 V
Current - average rectified10A
Operating temperature - junction150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
Reverse recovery time30 ns
RFN10NS3STL
[ALLOC] verified
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