RF6E065BNTCR

ROHM Semiconductor

MOSFET N-CH 30V 6.5A TUMT6

ROHM Semiconductor RF6E065BNTCR
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RF6E065BNTCR specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C6.5A (Ta)
Power dissipation910mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case6-SMD, Flat Leads
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs15.3mOhm @ 6.5A, 10V
Gate charge (Qg) (Max) @ vgs16.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds680 pF @ 15 V
RF6E065BNTCR
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