RF4L070BGTCR

ROHM Semiconductor

NCH 60V 7A, HUML2020L8, POWER MO

ROHM Semiconductor RF4L070BGTCR
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[IN STOCK] In Stock: 8 pcs
$0.75/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RF4L070BGTCR specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C7A (Ta)
Power dissipation2W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerUDFN
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs27mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs7.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds460 pF @ 30 V
RF4L070BGTCR
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