RF4L055GNTCR

ROHM Semiconductor

MOSFET N-CH 60V 5.5A HUML2020L8

ROHM Semiconductor RF4L055GNTCR
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[IN STOCK] In Stock: 23 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RF4L055GNTCR specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5.5A (Ta)
Power dissipation2W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerUDFN
Vgs(th) (Max) @ id2.7V @ 1mA
Rds on (Max) @ id, vgs43mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs7.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds400 pF @ 30 V
RF4L055GNTCR
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