RE1C002UNTCL

ROHM Semiconductor

MOSFET N-CH 20V 200MA EMT3F

ROHM Semiconductor RE1C002UNTCL
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MOQ 20 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RE1C002UNTCL specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.2V, 2.5V
Current - continuous drain (Id) @ 25°C200mA (Ta)
Power dissipation150mW (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseSC-89, SOT-490
Vgs(th) (Max) @ id1V @ 1mA
Rds on (Max) @ id, vgs1.2Ohm @ 100mA, 2.5V
Input capacitance (Ciss) (Max) @ vds25 pF @ 10 V
RE1C002UNTCL
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