RD3P130SPTL1

ROHM Semiconductor

MOSFET P-CH 100V 13A TO252

ROHM Semiconductor RD3P130SPTL1
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[IN STOCK] In Stock: 444 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RD3P130SPTL1 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C13A (Ta)
Power dissipation20W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs200mOhm @ 6.5A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2400 pF @ 25 V
RD3P130SPTL1
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