RCJ510N25TL

ROHM Semiconductor

MOSFET N-CH 250V 51A LPTS

ROHM Semiconductor RCJ510N25TL
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[IN STOCK] In Stock: 20 pcs
$3.64/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

RCJ510N25TL specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C51A (Tc)
Power dissipation1.56W (Ta), 40W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 1mA
Rds on (Max) @ id, vgs65mOhm @ 25.5A, 10V
Gate charge (Qg) (Max) @ vgs120 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7000 pF @ 25 V
RCJ510N25TL
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