R8003KND3TL1

ROHM Semiconductor

HIGH-SPEED SWITCHING NCH 800V 3A

ROHM Semiconductor R8003KND3TL1
Download datasheet (PDF)
[IN STOCK] In Stock: 1 pcs
$4.22/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

R8003KND3TL1 specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3A (Ta)
Power dissipation45W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4.5V @ 2mA
Rds on (Max) @ id, vgs1.8Ohm @ 1.5A, 10V
Gate charge (Qg) (Max) @ vgs11.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds300 pF @ 100 V
R8003KND3TL1
[ALLOC] verified
Quote