R6530KNX3C16
ROHM Semiconductor
MOSFET N-CH 650V 30A TO220AB
[IN STOCK] In Stock: 20 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 30A (Tc) |
| Power dissipation | 307W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 960µA |
| Rds on (Max) @ id, vgs | 140mOhm @ 14.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 56 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2350 pF @ 25 V |
R6530KNX3C16
[ALLOC] verified