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ROHM Semiconductor R6530KNX3C16

ROHM Semiconductor R6530KNX3C16

MPNR6530KNX3C16
End of Life

MOSFET N-CH 650V 30A TO220AB

$6.12Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

R6530KNX3C16 specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C30A (Tc)
Power dissipation307W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 960µA
Rds on (Max) @ id, vgs140mOhm @ 14.5A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2350 pF @ 25 V