R6015KNX

ROHM Semiconductor

MOSFET N-CH 600V 15A TO220FM

ROHM Semiconductor R6015KNX
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[IN STOCK] In Stock: 2 pcs
$3.95/ pc

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MOQ 1 · Bulk · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

R6015KNX specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id5V @ 1mA
Rds on (Max) @ id, vgs290mOhm @ 6.5A, 10V
Gate charge (Qg) (Max) @ vgs27.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1050 pF @ 25 V
R6015KNX
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