R6009END3TL1
ROHM Semiconductor
MOSFET N-CH 600V 9A TO252
[IN STOCK] In Stock: 5 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 9A (Tc) |
| Power dissipation | 94W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 1mA |
| Rds on (Max) @ id, vgs | 535mOhm @ 2.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 23 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 430 pF @ 25 V |
R6009END3TL1
[ALLOC] verified