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ROHM Semiconductor QS6M4TR

ROHM Semiconductor QS6M4TR

MPNQS6M4TR
End of Life

MOSFET N/P-CH 30V/20V 1.5A TSMT6

$0.6Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

QS6M4TR specifications
ParameterValue
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage30V, 20V
Current - continuous drain (Id) @ 25°C1.5A
Power - max1.25W
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.5V @ 1mA
Rds on (Max) @ id, vgs230mOhm @ 1.5A, 4.5V
Gate charge (Qg) (Max) @ vgs1.6nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds80pF @ 10V