QS5U27TR

ROHM Semiconductor

MOSFET P-CH 20V 1.5A TSMT5

ROHM Semiconductor QS5U27TR
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[IN STOCK] In Stock: 2 pcs
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MOQ 2 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

QS5U27TR specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C1.5A (Ta)
Power dissipation1.25W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
FET featureSchottky Diode (Isolated)
CaseSOT-23-5 Thin, TSOT-23-5
Vgs(th) (Max) @ id2V @ 1mA
Rds on (Max) @ id, vgs200mOhm @ 1.5A, 4.5V
Gate charge (Qg) (Max) @ vgs4.2 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds325 pF @ 10 V
QS5U27TR
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